Laser Doping Selective Emitter (LDSE)
LDSE process is adopted for high efficiency c-Si solar cell fabrication. Laser beam interacts with the doping material (typically Phosphoric Acid) on wafer surface and forms heavily doped region on the wafer. LDSE reduces the Ohmic contact resistance, enhances photon absorption at shorter wavelength, and reduces shading effect caused by wide screen-printed metal lines. This process improves the solar cell open circuit voltage Voc, short circuit current Isc, and fill factor FF, therefore enables c-Si solar cell with higher conversion efficiency.
- Very thin laser lines that leads to less shading effect
- Excellent Ohmic contact
- Self-aligned plating process may be used to form metal lines/contacts